| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| IDW15G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| KIA78R000F/PI KIA78R050F/PI KIA78R015F/PI KIA78R01 |
BIPOLAR LINEAR INTEGRATED CIRCUIT
5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM4
SEMICONDUCTOR
SEMICONDUCTOR TECHNICAL DATA
|
KEC(Korea Electronics)
|
| AN80T05 |
Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
|
Panasonic Semiconductor
|
| KV1913A KV1933A KV1973A KV2143 KV2153 GC1303 KV212 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, 1.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
OPTOCOUPLER 10MBPS OC 5-SOP
Tuning Varactors
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| P1804U P3100SCMC P3100SD A2106Z P2103A P2103ACMC P |
SIDACtor devices
solid state crowbar devices
|
TECCOR [Teccor Electronics]
TECCOR[Teccor Electronics]
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
